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Session
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Surname
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Name
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modeling and experiments
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Laboratory
|
|
1
|
Jeanne
|
BECDELIEVRE
|
Core-shell nanowires for piezotronics
|
Institut des Nanotechnologies de Lyon, Ecole Centrale de Lyon, Ecully, France
|
|
2
|
Rozenn
|
BERNARD
|
GaP/Si Antiphase domains annihilation at the early stages of growth
|
FOTON, CNRS, INSA Rennes, Rennes, France.
|
|
1
|
Daria
|
BEZNASIUK
|
Towards axial Si/GaAs nanowire heterostructures
|
Institut Néel, Grenoble, France
|
|
2
|
Guillaume
|
BINET
|
Study of Semi-Insulating Buried Heterostructure 1.3µm Electro-Absorption Modulated Laser
|
III-V Lab-Common laboratory of ‘Alcatel-Lucent Bell Labs France’, Marcoussis, France
|
|
2
|
Valeria
|
BRAGAGLIA
|
On how to fabricate single crystalline and highly ordered GeTe-Sb2Te3 alloys on Si (111)
|
Paul-Drude-Institut Berlin, Germany
|
|
2
|
Jean-Benoit
|
CLAUDE
|
Implantation and amorphization induced by Focused Ion Beam
|
Aix-Marseille Université, IM2NP- CNRS, Marseille, France
|
|
1
|
Stefano
|
CURIOTTO
|
Self-propelled motion of Au-Si droplets on Si substrates and Si nanowires growth
|
Aix Marseille Université, CNRS, CINaM, Marseille, France
|
|
2
|
Roy
|
DAGHER
|
CVD growth of graphene on SiC(0001) in hydrogen-argon atmosphere
|
CNRS-CRHEA, Valbonne,France
|
|
1
|
Zhenning
|
DONG
|
Ga-Catalyst GaAs Nanowires grown on Silicon by HVPE
|
Clermont Université, Université Blaise Pascal, Institut Pascal, Clermont-Ferrand
|
|
2
|
Maria
|
FAHED
|
V/III flux ratio effect on faceting for nanoscale selective area growth of InAs and InP by molecular beam epitaxy
|
I.E.M.N., Villeneuve d’Ascq Cedex, France
|
|
1
|
Zhihua
|
FANG
|
High Si incorporation in MBE - grown GaN nanowires
|
Univ. Grenoble Alpes, Institut Néel, Grenoble, France
|
|
2
|
Luc
|
FAVRE
|
Quantitative study of Ge diffusion in strained Si during epitaxial growth
|
Aix-Marseille Université, IM2NP- CNRS, Marseille
|
|
2
|
Janina
|
FELTER
|
Applicability of nucleation theory to the initial growth of molecular islands
|
Peter Grünberg Institut (PGI-3), Jülich, Germany
|
|
2
|
Chantal
|
FONTAINE
|
Directed growth of self-assembled InAs quantum dots on shallow GaAs [-110] nanostripes thanks to an intermediate strained GaInAs layer
|
LAAS-CNRS, Université de Toulouse, France
|
|
1
|
Xin
|
GUAN
|
GaAs nanowires with oxidation-proof arsenic capping for the growth of epitaxial shell
|
Institut des Nanosciences de Lyon (INL), Écully, France
|
|
1
|
Nicolas
|
JAMOND
|
GaN nanowires based piezogenerator
|
Laboratoire de Photonique et de Nanostructures ( LPN-CNRS), Marcoussis, France
|
|
1
|
Hanno
|
KÜPERS
|
Growth approaches for GaAs/(Al,Ga)As core-shell nanowires in molecular beam epitaxy and their impact on the luminescence
|
Paul-Drude-Institut, Berlin, Germany
|
|
2
|
Martin
|
LANIUS
|
Growth and Characterization of Ultrathin Topological Insulator Sb2Te3 /Bi2Te3 heterostructures on Si(111) grown by means of Molecular Beam Epitaxy
|
Peter Grünberg Institut, Jülich,Germany
|
|
2
|
Valerio
|
LATINI
|
Innovative self-assembling of QDs in InAs/GaAs multistacked structures: in-line correlation and ordering
|
Dipartimento di Fisica, Università di Roma Tor Vergata, Roma
|
|
2
|
Kee Han
|
LEE
|
Diamond heteroepitaxy on up-scalable Ir / SrTiO3 / Si (001)
|
CEA, LIST, Diamond Sensors Laboratory, Gif-sur-Yvette, France
|
|
1
|
Jean-Baptiste
|
LERAN
|
III-V Nanostructures Grown by Molecular Beam Epitaxy
|
Ecole Polytechnique Fédérale de Lausanne, Lausanne, Switzerland
|
|
1
|
Kailang
|
LIU
|
Nucleation behaviors and interactions of SiGe/Si (001) islands
|
Aix-Marseille Université, IM2NP- CNRS, Marseille
|
|
2
|
Kevin
|
LOUARN
|
III-V based Tunnel Heterojunction for Multijunction Solar Cells
|
LAAS-CNRS, Université de Toulouse, France - LNE, Paris
|
|
1
|
Dominique
|
MANGELINCK
|
3D Analysis of II-VI nanostructures by atom probe
|
Aix-Marseille Université, IM2NP- CNRS, Marseille
|
|
2
|
Enrica
|
MURA
|
Influence of hydrides on InP self-assembled nanostructures grown by MOVPE
|
Tyndall National Institute, Cork, Ireland
|
|
1
|
Thomas
|
PHILIPPE
|
Phase-Field Modeling of Nanowire Growth
|
Normandie Université, Groupe de Physique des Matériaux (GPM), Saint Etienne du Rouvray, France
|
|
1
|
Giacomo
|
PRIANTE
|
Axial heterostructures in self-catalyzed nanowires
|
CNRS-Laboratoire de Photonique et de Nanostructures, Marcoussis, France
|
|
2
|
Søren
|
ROESGAARD
|
Light emission from silicon with tin-containing nanocrystals
|
Interdisciplinary Nanoscience Center (iNANO), Aarhus C, Denmark
|
|
2
|
Julius
|
ROMBACH
|
Electrical conductivity and gas-sensing properties of doped and undoped single-crystalline In2O3 thin films: bulk vs. Surface
|
Paul-Drude-Institut,Berlin, Germany
|
|
2
|
Marco
|
SALVALAGLIO
|
Phase-field modeling for the morphological evolution of three-dimensional crystals
|
L-NESS and Dipartimento di Scienza dei Materiali, Universita degli Studi di Milano-Bicocca, Italy
|
|
2
|
Eduard
|
STERZER
|
Novel precursors for Ga(NAs) MOVPE growth with potentially less carbon incorporation for optoelectronics application
|
Material Sciences Center and Faculty of Physics/ *Faculty of Chemistry, Philipps-Universität Marburg, Germany
|
|
1
|
Davide
|
TEDESCHI
|
Nanowires Are Not So Cool
|
Dipartimento di Fisica, Sapienza Università di Roma, Roma, Italy
|
|
2
|
Jenny
|
TEMPELER
|
Directed Self-Assembly of Germanium Quantum Dots with E-Beam and EUV Interference Lithography
|
1Lehrstuhl für Technologie Optischer Systeme RWTH Aachen and JARA - FIT, Aachen, Germany
|
|
1
|
David
|
VAN TREEK
|
Electroluminescence and current-voltage measurements of single (In,Ga)N/GaN nanowire light-emitting diodes in the nanowire ensemble
|
Paul-Drude-Institut, Berlin, Germany
|
|
2
|
Patrick
|
VOGT
|
Comprehensive In-Situ Study of the Reaction Kinetics for the MBE growth of Ga2O3
|
Paul-Drude-Institut Berlin, Germany
|
|
1
|
Qian
|
ZHANG
|
Mechanisms of Morphological Evolution on Faceted Core-Shell Nanowire Surfaces
|
Northwestern University,Evanston, Illinois, US
|
